MCH5805 no.7125-1/5 features ? composite type with a p-channel sillicon mosfet (mch3314) and a schottky barrier diode (sb01-05) contained in one package facilitating high-density mounting. [mosfet] ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. [sbd] ? short reverse recovery time . ? low forward voltage . sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7125 MCH5805 package dimensions unit : mm 2195 [MCH5805] n1501 ts im ta-3399 mosfet : p-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --0.6 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --2.4 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 50 v nonrepetitive peak reverse surge voltage v rsm 50 v average output current i o 0.1 a surge forward current i fsm 50hz sine wave, 1 cycle 2 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qe any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain sanyo : mcph5 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 32 4 5 123 54
MCH5805 no.7125-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--0.3a 460 670 ms static drain-to-source on-state resistance r ds (on)1 i d =--0.3a, v gs =--10v 1.3 1.7 w r ds (on)2 i d =--0.2a, v gs =--4v 1.6 2.3 w input capacitance ciss v ds =--20v, f=1mhz 73 pf output capacitance coss v ds =--20v, f=1mhz 7 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 4 pf turn-on delay time t d (on) see specified test circuit. 6 ns rise time t r see specified test circuit. 3.5 ns turn-off delay time t d (off) see specified test circuit. 12.5 ns fall time t f see specified test circuit. 3 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--0.6a 2.4 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--0.6a 0.6 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--0.6a 0.2 nc diode forward voltage v sd i s =--0.6a, v gs =0 --0.88 --1.2 v [sbd] reverse voltage v r i r =50 m a50v forward voltage v f 1i f =100ma 0.55 v reverse current i r v r =25v 15 m a interterminal capacitance c v r =10v, f=1mhz 4.4 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns electrical connection (top view) switching time test circuit trr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d = --0.3a r l =100 w v dd = --30v v out MCH5805 v in 0v --10v v in duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s 54 12 3 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain
MCH5805 no.7125-3/5 --1.0 --0.8 --0.6 --0.4 --0.2 0 --0.50 --0.25 --0.75 --1.00 --1.25 --1.50 --1.75 --2.00 --0.6 --0.5 0 i d -- v ds 0 --0.4 --0.3 --0.2 --0.1 i d -- v gs 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 --25 c v ds = --10v ta=75 c it03941 it03942 --3.0v --4.0v --6.0v --10.0v --3.5v v gs = --2.5v -- 2 -- 4 -- 6 -- 8 0 --10 --12 --14 --16 --18 --20 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 57 23 57 3 --1.0 --0.1 2 1.0 100 5 7 10 3 2 5 7 3 2 i f -- v sd --1.0 7 5 3 2 --0.01 --0.5 --0.6 --0.4 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --0.1 7 5 3 2 v gs =0 --25 c 25 c ta=75 c sw time -- i d v dd = --30v v gs = --10v it03946 it03947 --10 --20 --30 --40 0 --50 --60 1.0 100 5 7 10 3 2 5 7 3 2 ciss, coss, crss -- v ds f=1mhz ciss coss crss r ds (on) -- v gs it03948 it03943 ta=25 c --40 --20 0 20 --60 40 60 80 100 120 140 160 r ds (on) -- ta it03944 i d = --0.2a, v gs = --4v i d = --0.3a, v gs = --10v ? yfs ? -- i d 10000 10 23 57 23 57 --0.01 --1.0 --0.1 100 1000 7 5 3 2 7 5 3 2 7 5 3 2 ta= --25 c 25 c 75 c it03945 25 c i d = --0.2a --0.3a t d (on) t r t f t d (off) v ds = --10v static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- ms diode forward voltage, v sd -- v forward current, i f -- a [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] drain-to-source voltage, v ds -- v ciss, coss, crss -- pf
MCH5805 no.7125-4/5 it03951 it03950 0 p d -- ta 0 1.0 0.8 0.6 0.4 0.2 20 40 60 80 100 120 140 160 --0.01 --0.1 a s o --0.1 --1.0 7 5 3 2 7 5 3 2 5 3 2 --1.0 23 57 --10 23 57 --100 23 57 10 s 1ms 10ms 100ms dc operation 100 s it03949 0 v gs -- qg 0 -- 7 -- 6 -- 5 -- 4 -- 3 -- 1 -- 2 --10 -- 9 -- 8 2.0 0.5 1.0 1.5 2.5 v ds = --10v i d = --0.6a i d = --0.6a i dp = --2.4a operation in this area is limited by r ds (on). 10 20 30 40 50 60 70 2 5 2 5 2 5 2 5 1000 100 10 1.0 2 5 0.1 0.01 0 id00261 i r -- v r 0.2 0.3 0.4 0.5 0.7 0.6 0.1 0 id00260 i f -- v f ta= 125 c 100 c 25 c 50 c 75 c 7 5 2 2 1.0 10 3 7 5 100 3 7 5 2 3 5 ta=125 c 25 c 0.02 0.04 0.06 0.08 0.10 2 1.0 10 3 7 5 2 3 5 23 57 1.0 10 23 57 100 id00263 c -- v r f=1mhz 180 360 q 360 (3) (1) 0 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 p f (av) -- i o it03952 (2) (4) mounted on a ceramic board(900mm 2 5 0.8mm) 1unit [mosfet] [mosfet] [sbd] [sbd] [sbd] [sbd] ta=25 c single pulse mounted on a ceramic board(900mm 2 5 0.8mm) 1unit [mosfet] total gate charge, qg -- nc ambient temperature, ta -- c drain-to-source voltage, v ds -- v sine wave reverse voltage, v r -- v reverse voltage, v r -- v average forward current, i o -- a forward voltage, v f -- v (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180 rectangular wave gate-to-source voltage, v gs -- v allowable power dissipation, p d -- w drain current, i d -- a interterminal capacitance, c -- pf reverse current, i r -- a average forward power dissipation, p f (av) -- w forward current, i f -- ma
MCH5805 no.7125-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of november, 2001. specifications and information herein are subject to change without notice. ps 2 1.0 323 57 2 0.1 357 0.01 7 0 0.4 0.8 2.0 2.4 1.2 1.6 2.8 id00264 i s -- t i s 20ms t time, t -- s surge forward current, i s (peak) -- a current waveform 50hz sine wave
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